, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB1604 description ? high-speed switching ? low collector to emitter saturation voltage : vce(sat)= -0.6v(max.)@lc= -10a ? full-pack package with outstanding insulation, which can be installed to the heat sink with one screw applications ? designed for low-voltage switching and general purpose applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic i cm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ ta=25c collector power dissipation @ tc=25"c junction temperature storage temperature range value -40 -20 -5 -10 -20 2 40 150 -55-150 unit v v v a a w w 'c c ? 1 2 3 a k-v9 ' io;;; oj i . l h , .? , .'. ?. , ' - - 0 - n - dim a b c d f h j k l n q r s a 2 ?^ 3 pin 1.base 2. collector 3. better to-220f package - c - -s- * 1 "f " r - t i r ? ~"f ? ; o ,-??, <>! u ;' < , ; -?->'.'; 1 a ' ! i i * * i * i v"" t ', < : ' " r - ..:;;; k ; ' j - - mm win max 14.95 15.05 10.00 10.10 4.40 4.60 0.75 0.80 3.10 3.30 3.70 3.90 0.50 0.70 13.4 13.6 1.10 1.30 5.00 5.20 2.70 2.90 2.20 2.40 2.65 2.85 6.40 6.60 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SB1604 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vbe(sat) icbo iebo hpe-1 hfe-2 fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc = -10ma, ib = 0 lc=-10a; ib=-0.33a ic=-10a;ib=-0.33a vcb= -40v; ie= 0 veb= -5v; lc= 0 lc=-0.1a;vce=-2v lc= -3a; vce= -2v ie= 0.5a; vce= -10v;f=10mhz min -20 45 90 typ. 30 max -0.6 -1.5 -50 -50 260 unit v v v ua ua mhz switching times ton tstg tf turn-on time storage time fall time lc=-3a;lbi=-lb2=-0.1a, 0.1 0.5 0.1 us u s u s ? hpe-2 classifications q 90-180 p 130-260
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